Advancing the hBN Defects Database through Photophysical Characterization of Bulk hBN
Chanaprom Cholsuk, Sujin Suwanna, Tobias Vogl

TL;DR
This paper extends the hBN defects database by systematically characterizing bulk hBN defects' photophysical properties, providing a comprehensive resource to bridge theory and experiment in quantum emitter research.
Contribution
The study introduces a large, detailed database of bulk hBN defect properties, including over 600 defects with various charge states, to improve understanding and identification of quantum emitters.
Findings
Vacancies induce stronger lattice distortions and broader phonon sidebands.
Most properties are independent, but the Huang-Rhys factor correlates with configuration coordinates.
The database and API facilitate machine learning integration and experimental-theoretical comparisons.
Abstract
Quantum emitters in hexagonal boron nitride (hBN) have gained significant attention due to a wide range of defects that offer high quantum efficiency and single-photon purity at room temperature. Most theoretical studies on hBN defects simulate monolayers, as this is computationally cheaper than calculating bulk structures. However, most experimental studies are carried out on multilayer to bulk hBN, which creates additional possibilities for discrepancies between theory and experiment. In this work, we present an extended database of hBN defects that includes a comprehensive set of bulk hBN defects along with their excited-state photophysical properties. The database features over 120 neutral defects, systematically evaluated across charge states ranging from -2 to 2 (600 defects in total). For each defect, the most stable charge and spin configurations are identified and used to…
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