Topological Layer-Spin Filter in Screw Dislocation

TL;DR

This paper theoretically investigates a multilayer Kane-Mele model with screw dislocations, revealing dissipationless edge states that act as layer-spin filters, enabling control over electronic spin and layer degrees of freedom with robustness against disorder.

Contribution

It introduces a novel topological layer-spin filter mechanism using screw dislocations in multilayer systems, demonstrating robust spin and layer control in electronic transport.

Findings

Dissipationless quantum spin Hall states propagate along screw dislocations.

Spin-up and spin-down carriers are separated into different layers.

Transport properties are robust against Anderson disorder.

Abstract

While the quantum spin Hall effect leverages two-dimensional topological states to manipulate spin without dissipation, layertonics extends this paradigm to three dimension by enabling control over the layer degree of freedom. Topological materials incorporating screw dislocations exhibit the capability for simultaneous manipulation of both electronic spin and layer degrees of freedom. In this work, the electronic transport properties of a multilayer Kane-Mele model with screw dislocations is studied theoretically. Numerical simulations of a screw dislocation reveal that dissipationless quantum spin Hall edge states propagate not only at the outer boundaries of the structure but also along the screw dislocation itself, working as layer-spin filter. In detail, 1) the spin-up and spin-down carriers starting from the same source layer flow to different drain layers along the topological channels, respectively. 2) The spin of carriers flowing into a given drain layer is determined by the input source layer. Moreover, we found that the transmission coefficient and spin polarization remain robust against Anderson disorder. Under magnetic disorder, spin flip and backscattering occur, suppressing the transmission coefficient while maintaining nearly unchanged spin polarization. Finally, the layer- and spin-resolved transport properties in a device with two screw dislocations are investigated as well. We have developed an innovative methodology to modulate electron transport with simultaneous layer and spin resolution.