Frequency comb generation in low-loss, low-stress, high-Q deuterated silicon nitride microring resonators in an 8-inch photonics platform

TL;DR

This paper demonstrates frequency comb generation in high-Q deuterated silicon nitride microring resonators fabricated on an 8-inch photonics platform, achieving ultralow losses and high data transmission rates with minimal power penalty.

Contribution

It introduces a simple, scalable process for producing low-loss, high-Q deuterated SiN microrings suitable for integrated photonics and demonstrates their application in high-speed optical communication.

Findings

Ultralow propagation losses (< 0.1 dB/cm) in deuterated SiN films.

Successful frequency comb generation in high-Q (~1 million) microrings.

High-speed data transmission with negligible power penalty at 25.78 GBaud/s.

Abstract

Systematic studies on different SiN films in terms of propagation losses are presented, and deuterated SiN emerges as a good candidate for ultralow loss (< 0.1 dB/cm) and reliability by simple 8-inch process with low thermal budget. Frequency comb generation in high-Q (~1 million) deuterated silicon nitride microring is demonstrated and used for intensity modulated direct detection transmission. Negligible power penalty for 25.78 GBaud/s NRZ and PAM4 is achieved at error rates <10-6, below the FEC limit.