$\mathbb{Z}_2$ topological trion insulator

TL;DR

This paper introduces a novel $Z_2$ topological insulator for trions in TMDs, featuring dissipationless edge states that could enable low-loss optoelectronic devices, with specific material realizations and robustness analysis.

Contribution

It proposes the concept of a $Z_2$ topological trion insulator with helical edge states, realized in moiré-patterned TMD systems, advancing topological excitonic device research.

Findings

Topological $Z_2$ number characterizes moiré trion bands.

Dissipationless edge states for trions are predicted.

Robustness of topological phase against charge screening is confirmed.

Abstract

Trions, charged quasiparticles formed by binding an exciton to an excess charge carrier, dominate the optical response of doped transition metal dichalcogenides (TMDs), and the study of the transport properties of trions in TMDs may have application in developing high-speed excitonic and optoelectronic devices. However, an important building block for low-dissipation optoelectronic devices that provides dissipationless transport channels for trions has remained elusive. Here, we propose the concept of a $\mathbb{Z}_2$ topological trion insulator that features helical dissipationless edge states for trions. This is realized for intralayer trions, which inherit the valley-orbit coupling of intralayer excitons in TMDs subject to a moir\'e periodic potential. We find that under certain circumstances, the moir\'e trion band becomes topological, characterized by the $\mathbb{Z}_2$ topological number. We further provide two specific material realizations of this $\mathbb{Z}_2$ topological insulator: a doped monolayer TMD placed on top of a twisted hBN substrate, and a generic twisted TMD heterobilayer. We also examine the effect of charge screening and find that the $\mathbb{Z}_2$ topological trion insulator remains robust. Our work paves the way toward realizing dissipationless excitonic devices.