Data-driven Discovery of Novel High-performance Quaternary Chalcogenide Photovoltaics

TL;DR

This study uses data-driven methods combined with advanced simulations to identify and analyze four promising quaternary chalcogenide materials with high potential for efficient photovoltaic applications.

Contribution

The paper introduces a novel approach integrating data-driven techniques with density functional theory and molecular dynamics to discover high-performance photovoltaic materials within the quaternary chalcogenide family.

Findings

Identified four compounds with optimal band gaps for visible-light absorption.

Demonstrated these materials have optical and electronic properties comparable to or better than traditional photovoltaics.

Showed defect tolerance and long carrier lifetimes indicating high potential for efficient solar cells.

Abstract

Photovoltaic materials facilitate the conversion of sunlight into electricity by harnessing the interaction between light and matter, offering an eco-friendly and cost-efficient energy solution. Combining data-driven approaches with static and time-dependent density functional theories and nonadiabatic molecular dynamics simulations, we predict 14 high-performance photoabsorber materials from a family of known quaternary semiconductors. Among these, we investigate four compounds - SrCuGdSe3, SrCuDyTe3, BaCuLaSe3, and BaCuLaTe3 in greater detail. Hybrid density functional theory calculations including spin-orbit coupling reveal that SrCuGdSe3, SrCuDyTe3, BaCuLaSe3 and BaCuLaTe3 possess direct band gaps of 1.65, 1.79, 1.05, and 1.01 eV, respectively. These band gap values lie close to an optimal range ideal for visible-light absorption. Consequently, the calculated optical absorption coefficient and spectroscopic limited maximum efficiency for these compounds become comparable or larger than crystalline silicon, GaAs, and methylammonium lead iodide. Calculated exciton binding energies for these compounds are relatively small (30-32 meV), signifying easy separation of the electron-hole pairs, and hence enhanced power conversion efficiencies. Investigations of photoexcited carrier dynamics reveal a relatively long carrier lifetime (~ 30-40 ns), suggesting suppressed nonradiative recombination and enhanced photo-conversion efficiencies. We further determined the defect formation energies in these compounds, which showed that despite the likely formation of cation vacancies and interstitial defects, midgap states remain absent making these defects non-detrimental to carrier recombination. Our theoretical predictions invite experimental verification and encourage further investigations of these and similar compounds in this quaternary semiconductor family.