Improving terahertz-detection sensitivity of 8x8 FET arrays through liquid-nitrogen cooling in a compact low-noise cryostat
Jakob Holstein, Nicholas K. North, Arne Hof, Sanchit Kondawar, Dmytro B. But, Mohammed Salih, Lianhe Li, Edmund H. Linfield, A. Giles Davies, Joshua R. Freeman, Alexander Valavanis, Alvydas Lisauskas, Hartmut G. Roskos

TL;DR
This paper demonstrates that cooling FET-based terahertz detectors to liquid nitrogen temperatures significantly enhances their sensitivity, enabling compact, high-performance THz sensing systems suitable for space applications.
Contribution
It introduces a liquid-nitrogen-cooled 8x8 FET array with improved NEP and bandwidth, optimized for THz spectroscopy in a compact, practical design.
Findings
NEP approaches 1-2 pW/√Hz at 20 K
Achieves >67 dB dynamic range without saturation
Provides 5 MHz bandwidth exceeding thermal detectors
Abstract
We show that the sensitivity of antenna-coupled field-effect transistors (FETs) to terahertz (THz) radiation improves continuously with decreasing temperature. The noise-equivalent power (NEP) of 540 GHz patch-antenna-coupled FETs decreases as temperature reduces to 20 K. We project NEP values approaching 1 to 2 pW/sqrt(Hz) under efficient power coupling conditions (e.g., using a superstrate Si-lens), which is comparable to superconducting niobium transition-edge sensors (TESs) at 4 K. Building on these findings, a compact, low-noise, liquid-nitrogen-cooled (77 K) FET-based direct (incoherent) THz-power sensing system} for spectroscopy applications was realized. Here, an 8x8 pixel-binned detector array fabricated in a commercial 65-nm Si-CMOS process, was optimized for operation in the 2.85 to 3.4 THz band. Characterization was performed in the focal plane of a 2.85-THz quantum-cascade…
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Taxonomy
TopicsSuperconducting and THz Device Technology · Terahertz technology and applications · Advanced Thermoelectric Materials and Devices
