Model of dark current in silicon-based barrier impurity band infrared detector devices

TL;DR

This paper introduces a new model combining chiral-phonon-assisted spin current and spatially-confined charge transport to explain dark current behavior in silicon-based BIB infrared detectors, addressing a key performance limitation.

Contribution

It presents a novel theoretical framework that explains dark current mechanisms across all voltages in silicon-based BIB infrared detectors.

Findings

The model explains the parabolic dark current behavior at low bias.

It elucidates the dark current generation mechanism over the entire voltage range.

Abstract

Dark current in silicon-based blocked impurity band (BIB) infrared detectors has long been a critical limitation on device performance. This work proposes a chiral-phonon-assisted spin current model at interfaces to explain the parabolic-like dark current behavior observed at low bias voltages. Concurrently, the spatially-confined charge transport theory is employed to elucidate the dark current generation mechanism across the entire operational voltage range.