Investigation on high-order planar Hall effect in trigonal PtBi$_2$
Fangqi Cai, Mingxi Chi, Yingjie Hu, Heyao Liu, Yangyang Chen, Chao Jing, Wei Ren, and He Wang

TL;DR
This study systematically investigates high-order planar Hall effect and anisotropic magnetoresistance in trigonal PtBi$_2$, revealing their common physical origin related to Fermi surface anisotropy and magnetoresistance scaling.
Contribution
It provides a comprehensive analysis of high-order PHE and AMR in t-PtBi$_2$, including experimental measurements, critical conditions, and computational simulations, advancing understanding of their origins.
Findings
High-order PHE and AMR appear at low temperatures and strong magnetic fields.
High-order features are linked to Fermi surface anisotropy and magnetoresistance scaling.
Experimental results align with simulations, confirming the proposed physical mechanisms.
Abstract
The trigonal PtBi (t-PtBi) as a Weyl semimetal possessing triply degenerate points in its electronic bands near the Fermi level endows it with rich electronic properties. Previous studies have already measured the planar Hall effect (PHE) and in-plane anisotropic magnetoresistance (AMR) of t-PtBi. We noticed that their experimental results exhibited high-order features in both the PHE and AMR, yet these features were not systematically investigated. In our work, we conducted more systematic measurements and analyses of the PHE and AMR in t-PtBi. Both PHE and AMR show high-order features under low temperatures and strong magnetic fields, and these features share a similar temperature and magnetic field dependence with the turn-on behavior of resistance and temperature curves, indicating a common physical origin for them. We further summarize the critical conditions for…
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