A superinductor in a deep sub-micron integrated circuit
T. H. Swift, F. Olivieri, G. Aizpurua-Iraola, J. Kirkman, G. M. Noah, M. de Kruijf, F. E. von Horstig, A. Gomez-Saiz, J. J. L. Morton, M. F. Gonzalez-Zalba

TL;DR
This paper demonstrates a silicon-integrated superinductor using TiN thin films with high kinetic inductance, enabling advanced quantum sensors and potentially impacting quantum computing, sensing, and metamaterials.
Contribution
It introduces a superinductor fabricated within a silicon IC using TiN, combining high impedance with integration benefits for quantum sensing and other applications.
Findings
Achieved a superinductor with impedance exceeding $R_Q$ within a silicon IC.
Enhanced rfSET sensitivity by over two orders of magnitude.
Reduced device area by a factor of 10,000.
Abstract
Superinductors are circuit elements characterised by an intrinsic impedance in excess of the superconducting resistance quantum (k), with applications from metrology and sensing to quantum computing. However, they are typically obtained using exotic materials with high density inductance such as Josephson junctions, superconducting nanowires or twisted two-dimensional materials. Here, we present a superinductor realised within a silicon integrated circuit (IC), exploiting the high kinetic inductance (~nH/) of TiN thin films native to the manufacturing process (22-nm FDSOI). By interfacing the superinductor to a silicon quantum dot formed within the same IC, we demonstrate a radio-frequency single-electron transistor (rfSET), the most widely used sensor in semiconductor-based quantum computers. The integrated nature of the rfSET reduces…
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