Low-energy domain wall racetracks with multiferroic topologies
Arundhati Ghosal, Alexander Qualls, Yousra Nahas, Shashank Ojha, Peter Meisenheimer, Shiyu Zhou, Maya Ramesh, Sajid Husain, Julia Mundy, Darrell Schlom, Zhi Yao, Sergei Prokhorenko, Laurent Bellaiche, Ramamoorthy Ramesh, Paul Stevenson, and Lucas Caretta

TL;DR
This paper introduces a voltage-controlled, low-energy magnetoelectric racetrack memory using BiFeO3 nanostrips, achieving high domain wall velocities and novel topological textures, promising ultralow-power, high-speed data storage.
Contribution
It demonstrates a room-temperature, voltage-controlled racetrack memory with novel topological magnetic textures and significantly reduced energy dissipation compared to spin-torque devices.
Findings
Domain walls move at km/s velocities
Energy dissipation is orders of magnitude lower
Novel topological magnetic textures observed
Abstract
Conventional racetrack memories move information by pushing magnetic domain walls or other spin textures with spin-polarized currents, but the accompanying Joule heating inflates their energy budget and can hamper scaling. Here we present a voltage-controlled, magnetoelectric racetrack in which transverse electric fields translate coupled ferroelectric-antiferromagnetic walls along BiFeO3 nanostrips at room temperature. Because no charge traverses the track, the switching dissipates orders of magnitude less energy than the most efficient spin-torque devices with more favourable scaling, making the scheme significantly more attractive at the nanoscale. We further uncover noncollinear topological magnetoelectric textures that emerge at domain walls in BiFeO3, where the nature of these topologies influences their stability upon translation. Among these are polar bi-merons and polar…
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Taxonomy
TopicsInorganic Chemistry and Materials · 2D Materials and Applications · Acoustic Wave Resonator Technologies
