Towards dislocation-driven quantum interconnects

TL;DR

This paper explores the potential of dislocation engineering in semiconductors and insulators to create robust quantum interconnects by analyzing NV centers in diamond near dislocations, showing promising coherence improvements.

Contribution

It provides a theoretical foundation for engineering one-dimensional arrays of spin defects along dislocations in solid-state materials.

Findings

NV centers near dislocations maintain bulk-like properties.

Coherence times of NV centers are significantly improved near dislocations.

Predicted magnetic resonance spectra aid experimental defect identification.

Abstract

A central problem in the deployment of quantum technologies is the realization of robust architectures for quantum interconnects. We propose to engineer interconnects in semiconductors and insulators by patterning spin qubits at dislocations, thus forming quasi one-dimensional lines of entangled point defects. To gain insight into the feasibility and control of dislocation-driven interconnects, we investigate the optical cycle and coherence properties of nitrogen-vacancy (NV) centers in diamond, in proximity of dislocations, using a combination of advanced first-principles calculations. We show that one can engineer spin defects with properties similar to those of their bulk counterparts, including charge stability and a favorable optical cycle, and that NV centers close to dislocations have much improved coherence properties. Finally, we predict optically detected magnetic resonance spectra that may facilitate the experimental identification of specific defect configurations. Our results provide a theoretical foundation for the engineering of one-dimensional arrays of spin defects in the solid state.