Mobility Extraction and Analysis of GaN HEMTs for RF Applications Using TCAD and Experimental Data

TL;DR

This study combines TCAD simulations and experimental data to analyze GaN HEMTs, providing detailed insights into their electrical behavior and device parameters for RF applications.

Contribution

The paper introduces a comprehensive approach integrating simulation and experimental characterization to analyze GaN HEMTs, enhancing understanding of their structure-performance relationships.

Findings

High ON/OFF current ratio of 190

Maximum field-effect mobility of ~1200 cm2/V.s

Good gate control with subthreshold swing of 80 mV/decade

Abstract

This paper presents an analysis of GaN high-electron-mobility transistors (HEMTs) using both TCAD simulation and experimental characterization. The energy band structure was studied using Nextnano simulation software to observe two-dimensional electron gas (2DEG) formation and carrier confinement under equilibrium conditions. Additionally, I-V and C-V data from fabricated research-grade GaN HEMTs were analyzed to extract key electrical parameters. The device demonstrated an ON current of 1.9 mA and an OFF current of 0.01 mA, indicating a strong ON/OFF current ratio. A subthreshold swing of 80 mV/decade and a DIBL of 5 mV/V were observed, confirming good gate control and short-channel suppression. The ON-resistance was 22.72 ohm per micron, with a saturation voltage of 1 V . The peak transconductance was extracted as 0.18 mS in the linear region and 0.5 mS in saturation. Field-effect mobility was calculated using the transconductance method, with a maximum value of approximately 1200 cm2/V.s at low drain bias. The combined simulation and experimental approach provided comprehensive insight into GaN HEMT behavior, enabling a deeper understanding of structure-performance relationships critical to advanced transistor design.