Beyond ensemble averaging: Parallelized single-shot readout of hole capture in diamond

TL;DR

This paper introduces a novel optical microscopy and spectroscopy method for single-shot charge readout in diamond NV centers, revealing nanoscale charge dynamics crucial for quantum and electronic device development.

Contribution

It presents a new platform combining microscopy and spectroscopy for single-shot charge detection, surpassing ensemble measurement limitations in quantum-electronic research.

Findings

Resolved roles of ionized impurities in charge capture

Measured NV- hole capture radii exceeding 0.2 μm

Demonstrated near-complete neutralization of charge traps

Abstract

Understanding the generation, transport and capture of charge carriers in semiconductors is of fundamental technological importance. However, the ensemble measurement techniques ubiquitous in electronics offer limited insight into the nanoscale environment that is crucial to the operation of modern quantum-electronic devices. Here, we combine widefield optical microscopy with precision spectroscopy to examine the capture of photogenerated holes by negatively charged nitrogen vacancy (NV-) centers in diamond. Simultaneous single-shot charge readout over hundreds of individual NVs allows us to resolve the roles of ionized impurities, reveal the formation of space charges fields, and monitor the thermalization of hot photo-carriers during diffusion. We measure effective NV- hole capture radii in excess of 0.2 um, a value approaching the Onsager limit and made possible here thanks to the near-complete neutralization of coexisting charge traps. These results establish a new platform for resolving charge dynamics beyond ensemble averages, with direct relevance to nanoscale electronics and quantum devices.