Near transform-limited single photons from rapid-thermal annealed quantum dots
Hendrik Mannel, Fabio Rimek, Marcel Zoellner, Nico Schwarz, Andreas D. Wieck, Nikolai Bart, Arne Ludwig, Martin Geller

TL;DR
This study demonstrates that rapid thermal annealing can tune the emission wavelength of quantum dots without significantly degrading their single-photon emission quality, producing near transform-limited photons suitable for quantum communication.
Contribution
It shows that high-temperature RTA effectively tunes quantum dot emission while maintaining near transform-limited linewidths, a novel approach for quantum photonic device optimization.
Findings
Single-photon emission with near transform-limited linewidths
RTA induces controlled blueshift without degrading optical quality
Dephasing time T2 is only 1.5 times the Fourier limit T2=2T1
Abstract
Single-photon emitters are essential components for quantum communication systems, enabling applications such as secure quantum key distribution and the long-term vision of a quantum internet. Among various candidates, self-assembled InAs/GaAs quantum dots (QDs) remain highly promising due to their ability to emit coherent and indistinguishable photons, as well as their compatibility with photonic integration. In this work, we investigate the impact of post-growth rapid thermal annealing (RTA) on the quantum optical properties of single self-assembled QDs embedded in a p-i-n diode structure. The annealing process induces a controlled blueshift of the emission wavelength by promoting Ga in-diffusion and intermixing. Using resonance fluorescence measurements at cryogenic temperatures (4.2 K), we investigate the single-photon statistics, the emission linewidths, and coherence time of…
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Taxonomy
TopicsPhotonic and Optical Devices · Near-Field Optical Microscopy · Semiconductor Quantum Structures and Devices
