Spin ordering-induced fully-compensated ferrimagnetism

TL;DR

This paper proposes a novel method to induce fully-compensated ferrimagnetism by engineering spin ordering through bilayer stacking, enabling zero-net-magnetization magnets with non-relativistic spin splitting for spintronic applications.

Contribution

It introduces a new approach to achieve fully-compensated ferrimagnetism by manipulating spin order rather than lattice symmetry, demonstrated via first-principles calculations on a bilayer system.

Findings

Bilayer stacking can switch electronic states by tuning the Ne9el vector.

The proposed method extends to inducing altermagnetism.

First-principles calculations confirm the feasibility of the approach.

Abstract

Fully-compensated ferrimagnets exhibit zero net magnetic moment yet display non-relativistic global spin splitting, making them highly advantageous for constructing high-performance spintronic devices. The general strategy is to break the inversion symmetry of conventional antiferromagnets or the rotational/mirror symmetry of altermagnets to achieve fully-compensated ferrimagnets. Here, we propose to induce fully-compensated ferrimagnetism by engineering the spin ordering rather than modifying the lattice structure. Bilayer stacking engineering offers a convenient platform to verify our proposal and readily enables switching between two distinct electronic states by tuning the $\mathrm{N\acute{e}el}$ vector of one layer. By the first-principles calculations, a bilayer system is constructed with monolayer $\mathrm{Cr_2C_2S_6}$ as the elementary building block to corroborate our proposal. This strategy can also be extended to inducing altermagnetism via spin ordering engineering. Our work offers an alternative route to realize non-relativistic spin splitting in zero-net-magnetization magnets, paving the way for the advancement and construction of low-power spintronic device.