Hole distribution and self-doping enhanced electronic correlation in hole-doped infinite-layer nickelates
Hongbin Qu, Guang-Ming Zhang, and Gang Li

TL;DR
This study investigates the electronic structure of hole-doped La$_{1-x}$Sr$_x$NiO$_2$, revealing that holes distribute equally between Ni-3$d_{x^2-y^2}$ and interstitial-$s$ orbitals, which influences electronic correlations and challenges simplified models.
Contribution
The paper provides a detailed theoretical analysis showing the significant role of interstitial-$s$ orbitals in hole distribution and correlation effects in infinite-layer nickelates, supported by ARPES data.
Findings
Holes are equally distributed to Ni-3$d_{x^2-y^2}$ and interstitial-$s$ orbitals.
Interstitial-$s$ orbital impacts the renormalization of Ni-3$d_{x^2-y^2}$ band.
Interstitial-$s$ acts as a charge donor, enhancing Ni-3$d_{x^2-y^2}$ correlations.
Abstract
The minimal model for infinite-layer nickelates remains under debate, particularly regarding the hybridization between itinerant interstitial- and the correlated Ni-3 orbitals, as well as the interaction between and other orbitals. Additionally, how the doped holes in LaSrNiO are distributed among different orbitals remain unresolved. Motivated by recent angle resolved photoemission spectroscopy (ARPES) experiments, we theoretically study the electronic structure of infinite-layer LaSrNiO at various doping levels. We find that, unlike the expectation from a rigid band shift, holes are equally distributed to Ni-3 and interstitial- orbitals. The role of interstitial- orbital is further confirmed from the renormalization of Ni-3 band, for which the coupling between interstitial- and…
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Taxonomy
TopicsMagnetic properties of thin films
