Heterogeneous integration of silicon nitride and amorphous silicon carbide photonics
Zizheng Li, Bruno Lopez-Rodriguez, Naresh Sharma, Roald van der Kolk, Thomas Scholte, Harmen Smedes, R.Tufan Erdogan, Jin Chang, Hugo Voncken, Jun Gao, Ali W Elshaari, Simon Gr\"oblacher, Iman Esmaeil Zadeh

TL;DR
This paper demonstrates the monolithic integration of amorphous silicon carbide with silicon nitride photonics, combining their advantages for enhanced performance, tunability, and flexible coupling strategies in integrated photonic applications.
Contribution
It introduces a novel heterogeneous integration method of a-SiC and SiN photonics, achieving low interconnection loss, high integration density, and significantly improved thermo-optic tuning efficiency.
Findings
Achieved 0.32 dB interconnection loss between a-SiC and SiN
Increased integration density by over 4,444 times
Realized 27 times higher thermo-optic tuning efficiency
Abstract
Amorphous silicon carbide (a-SiC) has emerged as a compelling candidate for applications in integrated photonics, known for its high refractive index, high optical quality, high thermo-optic coefficient, and strong third-order nonlinearities. Furthermore, a-SiC can be easily deposited via CMOS-compatible chemical vapor deposition (CVD) techniques, allowing for precise thickness control and adjustable material properties on arbitrary substrates. Silicon nitride (SiN) is an industrial well-established and well-matured platform, which exhibits ultra-low propagation loss, but it is suboptimal for high-density reconfigurable photonics due to the large minimum bending radius and constrained tunability. In this work, we monolithically combine a-SiC with SiN photonics, leveraging the merits of both platforms, and achieve the a-SiC/SiN heterogeneous integration with an on-chip interconnection…
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Taxonomy
TopicsSilicon Nanostructures and Photoluminescence · Photonic and Optical Devices · Thin-Film Transistor Technologies
