Observation of Integer and Fractional Chern insulators in high Chern number flatbands
Jingwei Dong, Le Liu, Jundong Zhu, Zitian Pan, Yu Hong, Fankun Wang, Zhiyuan Ren, Zhengnan Jia, Kenji Watanabe, Takashi Taniguchi, Luojun Du, Dongxia Shi, Wei Yang, Guangyu Zhang

TL;DR
This paper reports the experimental observation of high Chern number topological phases, including fractional Chern insulators, in a novel twisted rhombohedral trilayer-bilayer graphene system, expanding the understanding of correlated topological states.
Contribution
It introduces a new moiré system, tRTBG, as a platform for exploring high Chern number fractional quantum anomalous Hall effects and fractional Chern insulators beyond traditional paradigms.
Findings
Observation of QAH with C=3 at v=1 and v=3
Detection of FCI with C=-6/5 at v=12/5
Evidence of FCI with C=-3/2 at v=5/2
Abstract
Moir\'e flatbands with high Chern numbers (C>1) offer opportunities to study the fractional quantum anomalous Hall effects that go beyond the Landau level paradigm with C=1, which remain unexplored yet. Here, we target the novel topological phases in high Chern number flatbands by designing a new moir\'e system, i.e., twisted rhombohedral trilayer-bilayer graphene. We observe quantized anomalous Hall effects (QAH) with C = 3 at v = 1 and v = 3, demonstrating the high Chern number nature of the flat band from continuum calculations. By fractionally filling the flat band, we observe QAH with C = 2 at even-denominator fractional filling v = 3/2, as well as QAH with C = 3 continuously from v = 1 to the even-denominator v = 3/2 at zero magnetic fields. Most importantly, we observe, for the first time, evidence of an FCI with C = -6/5 at v = 12/5, corresponding to 2/5 filling of a high Chern…
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