Probing electron spin dynamics in single telecom InAs(P)/InP quantum dots using the Hanle effect

TL;DR

This study demonstrates the first Hanle effect measurement in single InAs(P)/InP quantum dots emitting in the telecom C-band, revealing an electron spin dephasing time comparable to GaAs QDs, highlighting their potential for quantum communication.

Contribution

First experimental determination of electron spin dephasing time in single InAs(P)/InP telecom quantum dots using the Hanle effect.

Findings

Electron spin dephasing time T2* = 1.59 ns was measured.

InP-based telecom QDs have comparable T2* to GaAs QDs.

Large quantum dot volume may reduce hyperfine interaction effects.

Abstract

Spins of carriers confined in quantum dots (QDs) are promising candidates for qubits due to their relatively long spin relaxation times. However, the electron spin dephasing, primarily driven by hyperfine interactions with nuclear spins, can limit their coherence. Here, we report the first Hanle effect demonstration in single InAs(P)/InP QDs emitting in the telecom C-band leading to experimental determination of electron spin dephasing time. Using polarization-resolved photoluminescence spectroscopy, we identified excitonic complexes and confirmed the presence of a negatively charged trion, exhibiting a degree of circular polarization (DOCP) of $-36\%$ under quasi--resonant excitation. From the analysis of Hanle linewidth and employing a previously reported value of the electron $g$-factor, we extracted an electron spin dephasing time of $T_2^{\ast} = 1.59 \pm 0.49~\mathrm{ns}$. Despite the large indium nuclear spin, the obtained $T_2^{\ast}$ is comparable to values reported for GaAs-based QDs, which we attribute to the larger volume of the InAs(P)/InP QDs. These findings confirm the potential of InP-based telecom QDs for use in spin-photon interfaces.