Resilient cluster Mott states in layered Nb$_3$Cl$_8$ against pressure-induced symmetry breaking
Hongbin Qu, Xiaoqun Wang, Hai-Qing Lin, ang Gang Li

TL;DR
This study combines advanced computational methods to analyze how pressure affects the electronic and structural properties of Nb$_3$Cl$_8$, revealing the robustness of its cluster Mott insulating state despite symmetry breaking.
Contribution
It provides the first systematic theoretical analysis of pressure-induced symmetry breaking effects on the cluster Mott state in Nb$_3$Cl$_8$, combining DFT and DMFT methods.
Findings
Pressure reduces the charge gap but maintains the cluster Mott insulating state.
Local symmetry breaking occurs under pressure, changing from C_{3v} to C_s.
The gap reduction is due to increased bandwidth and decreased Coulomb interactions.
Abstract
In this work, by combining density-functional theory (DFT) with dynamical mean-field calculations (DMFT), we compare the crystal and electronic structures of the prototype cluster Mott insulator NbCl at ambient and high-pressure. We explain the finite but significantly reduced charge gap experimentally observed at GPa. We reveal a local symmetry breaking of the Nb trimer under pressure, reducing its symmetry from to . This leads to a strong bandwidth enhancement and a lift of band degeneracy. Crucially, despite the significant change of band details, the cluster Mott insulating state is robust against local symmetry breaking. We show that the experimental observed gap under pressure is still a cluster Mott gap and its reduced value stems from both increased bandwidth and reduced Coulomb interactions under pressure. Our study provides the first…
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