Reversible Modification of Rashba States in Topological Insulators at Room Temperature by Edge Functionalization

TL;DR

This study demonstrates a reversible, room-temperature method to control Rashba states in topological insulators through edge functionalization, enabling potential spintronic device applications.

Contribution

It introduces a novel, reversible approach to modulate spin textures in topological insulators by chemical edge functionalization, confirmed by experiments and theoretical calculations.

Findings

Reversible switching of Rashba edge states at room temperature.

Edge functionalization alters spin-orbit coupling strength.

Density functional theory supports experimental observations.

Abstract

Quantum materials with novel spin textures from strong spin-orbit coupling (SOC) are essential components for a wide array of proposed spintronic devices. Topological insulators have necessary strong SOC that imposes a unique spin texture on topological states and Rashba states that arise on the boundary, but there is no established methodology to control the spin texture reversibly. Here, we demonstrate that functionalizing Bi2Se3 films by altering the step-edge termination directly changes the strength of SOC and thereby modifies the Rashba strength of 1D edge states. Scanning tunneling microscopy/spectroscopy shows that these Rashba edge states arise and subsequently vanish through the Se functionalization and reduction process of the step edges. The observations are corroborated by density functional theory calculations, which show that a subtle chemical change of edge termination fundamentally alters the underlying electronic structure. Importantly, we experimentally demonstrated fully reversible and repeatable switching of Rashba edge states across multiple cycles at room temperature. The results imply Se functionalization as a practical method to control SOC and spin texture of quantum states in topological insulators.