High-Performance Self-Powered Photoelectrochemical Detection Using Scalable InGaN/GaN Nanowire Arrays

TL;DR

This paper introduces a scalable, self-powered photoelectrochemical photodetector based on InGaN/GaN nanowire arrays, demonstrating high responsivity, stability, and extended visible response, suitable for efficient optoelectronic applications.

Contribution

First demonstration of self-powered PEC photodetectors using scalable InGaN/GaN nanowire arrays with high photoresponsivity and stability.

Findings

High photoresponsivity of 330 mA/W at low illumination

Strong UV sensitivity with extended visible response

Fast, stable, and reproducible performance

Abstract

Photoelectrochemical photodetectors (PEC-PDs) are promising owing to their simple, low-cost fabrication, self-powered operation, high photoresponse, and environmental sensitivity. In this work, we report for the first time the self-powered PEC photodetection characteristics of nanowire (NW) based green-emitting InGaN/GaN multiple quantum well (MQW) PEC-PDs, fabricated via a scalable top-down approach.The device exhibits strong UV sensitivity with a peak at 365 nm and an extended response into the visible region.Notably, a high photoresponsivity of 330 mA/W was achieved at a lower illumination intensity of 0.7 mW/cm2. Furthermore, the photodetector demonstrates fast, stable, and reproducible performance across varying biases and illumination conditions. These results suggest that InGaN/GaN MQW nanowire-based PEC photodetectors hold strong promise for scalable, efficient, and stable self-powered optoelectronic applications