Ideal Topological Flat Bands in Two-dimensional Moir\'e Heterostructures with Type-II Band Alignment
Yunzhe Liu, Anoj Aryal, Kaijie Yang, Dumitru Calugaru, Zhenyao Fang, Haoyu Hu, Qimin Yan, B. Andrei Bernevig, Chao-xing Liu

TL;DR
This paper proposes a design principle for creating topological flat bands with ideal quantum geometry in 2D moiré heterostructures with type-II band alignment, enabling tunable and potentially exotic quantum phases.
Contribution
It introduces a moiré Chern-band model and a topological heavy fermion model to realize and control ideal topological flat bands in type-II heterostructures, independent of twist angle.
Findings
Topological flat bands can be realized with strong moiré potential exceeding atomic band gap.
Band flatness and quantum geometry are tunable via external gate voltages.
Design strategy is insensitive to twist angle and applicable to various materials.
Abstract
Topological flat bands play an essential role in inducing exotic interacting physics, ranging from fractional Chern insulators to superconductivity, in moir\'e materials. In this work, we propose a design principle for realizing topological flat bands with "ideal quantum geometry", namely the trace of Fubini-Study metric equals to the Berry curvature, in a class of two-dimensional moir\'e heterostructures with type-II band alignment. We first introduce a moir\'e Chern-band model to describe this system and show that topological flat bands can be realized in this model when the moir\'e superlattice potential is stronger than the type-II atomic band gap of the heterostructure. Next, we map this model into a topological heavy fermion model that consists of a localized orbital for "f-electron" and a conducting band for "c-electron". We find that both the flatness and quantum geometry of the…
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Taxonomy
TopicsTopological Materials and Phenomena · Graphene research and applications · Quantum and electron transport phenomena
