Fast nanothermometry based on direct electron detection of electron backscattering diffraction patterns
Ryan Gnabasik, Razan O. Nughays, Ashlynn Overholser, Vijay Kumar, Shantal Adajian, Nicol\`o Maria della Ventura, Daniel S. Gianola, Bolin Liao

TL;DR
This paper introduces a rapid, non-contact nanothermometry technique using electron backscattering diffraction patterns in SEMs, achieving high spatial resolution and sensitivity for thermal mapping at the nanoscale.
Contribution
The work develops a novel Fourier analysis method to detect temperature-induced changes in EBSD patterns, enabling high-sensitivity, real-time thermal measurements in SEMs.
Findings
Simulated temperature sensitivity of ~0.15% per K.
Experimental sensitivity of 0.14% per K on silicon.
Achieved 13-K temperature uncertainty with 10-second acquisition.
Abstract
Accurate temperature measurement at the nanoscale is crucial for thermal management in next-generation microelectronic devices. Existing optical and scanning-probe thermometry techniques face limitations in spatial resolution, accuracy, or invasiveness. In this work, we demonstrate a fast and non-contact nanothermometry method based on temperature-induced changes in electron backscattering diffraction (EBSD) patterns captured by a high-performance direct electron detector within a scanning electron microscope (SEM). Using dynamical electron simulations, we establish the theoretical temperature sensitivity limits for several semiconductors (Si, Ge, GaAs, and GaN), showing that thermal diffuse scattering (TDS) leads to a measurable smearing of Kikuchi bands in the EBSD patterns. We develop a Fourier analysis method that captures these subtle changes across the full diffraction pattern,…
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Taxonomy
TopicsAdvanced Electron Microscopy Techniques and Applications · Silicon and Solar Cell Technologies · Optical Coatings and Gratings
