Spin-orbit coupling in digital alloyed InGaAs quantum wells

TL;DR

This paper investigates how digital alloying in InGaAs quantum wells can significantly modify spin-orbit coupling, which is crucial for spintronics and quantum computing applications, by analyzing magnetoresistance patterns.

Contribution

It demonstrates that digital alloying can alter spin-orbit coupling by up to 138 meV·Å, providing insights into interface effects on spin properties.

Findings

Digital alloying modifies spin-orbit coupling in InGaAs quantum wells.

Changes in spin-orbit coupling are up to 138 meV·Å.

Modifications are linked to interfacial Rashba effects.

Abstract

Increasing the spin-orbit coupling in InGaAs quantum wells is desirable for applications involving spintronics and topological quantum computing. Digital alloying is an approach towards growing ternary quantum wells that enables asymmetric interfaces and compositional grading in the quantum well, which can potentially modify the spin-orbit coupling in the quantum well. The spin-orbit coupling of the quantum wells is extracted from beating patterns in the low magnetic field magnetoresistance. Digital alloying is found to modify the spin-orbit coupling by up to 138 meV\textnormal{\AA}. The changes induced in the spin-orbit coupling can be qualitatively understood as being due to modifications in the interfacial Rashba spin-orbit coupling.