Scalable Etch-Free Transfer of Low-Dimensional Materials from Metal Films to Diverse Substrates

TL;DR

This paper introduces a scalable, etch-free transfer method for low-dimensional materials using Field's metal, enabling high-quality transfer from metal films to various substrates for advanced nanoelectronic applications.

Contribution

A novel, scalable, etch-free transfer technique employing Field's metal for gentle delamination of low-dimensional materials from metal films.

Findings

Successful transfer of graphene nanoribbons to diverse substrates.

Preservation of structural and chemical integrity after transfer.

Fabrication of GNR-based transistors with high on/off ratios exceeding 10^3.

Abstract

Low-dimensional materials hold great promises for exploring emergent physical phenomena, nanoelectronics, and quantum technologies. Their synthesis often depends on catalytic metal films, from which the synthesized materials must be transferred to insulating substrates to enable device functionality and minimize interfacial interactions during quantum investigations. Conventional transfer methods, such as chemical etching or electrochemical delamination, degrade material quality, limit scalability, or prove incompatible with complex device architectures. Here, a scalable, etch-free transfer technique is presented, employing Field's metal (51% In, 32.5% Bi, and 16.5% Sn by weight) as a low-melting-point mechanical support to gently delaminate low-dimensional materials from metal films without causing damage. Anchoring the metal film during separation prevents tearing and preserves material integrity. As a proof of concept, atomically precise graphene nanoribbons (GNRs) are transferred from Au(111)/mica to dielectric substrates, including silicon dioxide (SiO_2) and single-crystalline lanthanum oxychloride (LaOCl). Comprehensive characterization confirms the preservation of structural and chemical integrity throughout the transfer process. Wafer-scale compatibility and device integration are demonstrated by fabricating GNR-based field-effect transistors (GNRFETs) that exhibit room-temperature switching with on/off current ratios exceeding 10^3. This method provides a scalable and versatile platform for integrating low-dimensional materials into advanced low-dimensional materials-based technologies.