New plasmon-like mode in PdTe$_{2}$: Raman scattering and memory function study
Bharathiganesh Devanarayanan, Sahil Rathi, Jalaja Pandya, Sonika, C.S.Yadav, Navinder Singh, Satyendra Nath Gupta

TL;DR
This study identifies a new plasmon-like mode in PdTe$_{2}$ through temperature-dependent Raman scattering, supported by theoretical modeling and phenomenological analysis, revealing its electronic origin and anomalous phonon behavior.
Contribution
The paper reports the discovery of a new plasmon-like mode in PdTe$_{2}$ and combines experimental Raman data with theoretical and phenomenological models to confirm its electronic nature.
Findings
New mode appears below 100 K at 250 cm$^{-1}$
Raman relaxation rate is linearly dependent on frequency
Phonon frequencies show anomalous behavior above 100 K
Abstract
PdTe is a type II Dirac semimetal that has garnered significant attention due to its intriguing electronic and topological properties. Here, we report temperature dependent Raman scattering study of PdTe in the temperature range from 10 K to 300 K. Our study reveals emergence of a new unreported peak below 100 K, centered around 250 cm. We argue that the new mode is not a phonon mode because the Raman spectra calculated using Density Functional Theory shows only two intense peaks at 85 and 128 . To ascertain the origin of this new peak, we constructed a microscopic model of electrons coupling to a single plasmon mode at 250 and using the memory function formalism, we obtained that the Raman relaxation rate is linear in frequency. We also performed phenomenological analysis of the Raman response from the experimental data and computed…
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Taxonomy
TopicsChalcogenide Semiconductor Thin Films · Phase-change materials and chalcogenides · Advanced Semiconductor Detectors and Materials
