300 mm Wafer-Scale SiN Platform for Broadband Soliton Microcombs Compatible with Alkali Atomic References
Shao-Chien Ou, Alin Antohe, Lewis G. Carpenter, Gregory Moille, Kartik Srinivasan

TL;DR
This paper demonstrates the fabrication of broadband soliton microcombs on 300 mm silicon nitride wafers using a low-stress deposition process, enabling scalable integration with electronic and photonic devices for advanced applications.
Contribution
It introduces a low-stress plasma-enhanced chemical vapor deposition process for 300 mm SiN wafers, achieving high-quality, broadband microcombs compatible with electronic integration.
Findings
Consistent high intrinsic quality factor across 300 mm wafers
Broadband soliton microcomb generation extending to alkali atom wavelengths
Successful fabrication of thick SiN films with low stress and uniform thickness
Abstract
Chip-integrated optical frequency combs (OFCs) based on Kerr nonlinear resonators are of great significance given their scalability and wide range of applications. Broadband on-chip OFCs reaching visible wavelengths are especially valuable as they address atomic clock transitions that play an important role in position, navigation, and timing infrastructure. Silicon nitride (SiN) deposited via low pressure chemical vapor deposition (LPCVD) is the usual platform for the fabrication of chip-integrated OFCs, and such fabrication is now standard at wafer sizes up to 200 mm. However, the LPCVD high temperature and film stress poses challenges in scaling to larger wafers and integration with electronic and photonic devices. Here, we report the linear performance and broadband frequency comb generation from microring resonators fabricated on 300 mm wafers at AIM Photonics, using a lower…
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Taxonomy
TopicsSilicon Nanostructures and Photoluminescence · Photonic and Optical Devices · Semiconductor materials and devices
