Future prospect of anisotropic 2D tin sulfide (SnS) for emerging electronic and quantum device applications

TL;DR

This paper reviews recent advances in anisotropic 2D tin sulfide (SnS), highlighting its unique properties and potential applications in electronic, energy, and quantum devices, while discussing current challenges and future opportunities.

Contribution

It provides a comprehensive overview of recent developments in high-quality SnS monolayers, characterization techniques, and emerging device applications, emphasizing future prospects in quantum technologies.

Findings

High-quality monolayer SnS can be isolated.

SnS exhibits distinctive anisotropic optical and electronic properties.

Potential applications in energy, neuromorphic, spintronics, and quantum devices.

Abstract

The family of anisotropic two-dimensional (2D) emerging materials is rapidly evolving due to their low crystal symmetry and in-plane structural anisotropy. Among these, 2D tin sulfide (SnS) has gained significant attention because of its distinctive crystalline symmetry and the resulting extraordinary anisotropic physical properties. This perspective explores recent developments in anisotropic 2D SnS. In particular, it highlights advances in isolating high-quality SnS monolayers (1L-SnS) and in applying advanced techniques for anisotropic characterization. The discussion continues with an overview of the anisotropic optical and electronic properties of SnS, followed by recent progress in emerging electronic device applications, including energy conversion & storage, neuromorphic (synaptic) systems, spintronics and quantum technologies. In addition to presenting significant research findings on SnS, this perspective outlines current limitations and discusses emerging opportunities and future prospects for its application in quantum devices.