Nitrogen Vacancies Induce Fatigue in Ferroelectric $\mathrm{Al_{0.93}B_{0.07}N}$
Walter J. Smith, Betul Akkopru-Akgun, Erdem Ozdemir, Bogdan Dryzhakov, John Hayden, Jon-Paul Maria, Kyle P. Kelley, Clive A. Randall, Susan Trolier-McKinstry, Thomas E. Beechem

TL;DR
This study identifies nitrogen vacancies as the defect responsible for fatigue in ferroelectric Al0.93B0.07N, revealing that switching induces vacancy formation which limits device endurance.
Contribution
The paper uncovers the role of nitrogen vacancies in ferroelectric fatigue, linking defect formation to switching-induced damage in Al0.93B0.07N.
Findings
Nitrogen vacancies increase with ferroelectric switching.
A transition near 2.1 eV correlates with vacancy formation.
Vacancy formation limits device endurance.
Abstract
Wurtzite ferroelectrics (e.g., ) are being explored for high-temperature and emerging near-, or in-compute, memory architectures due to the material advantages offered by their large remanent polarization and robust chemical stability. Despite these advantages, current devices do not have sufficient endurance lifetime to meet roadmap targets. To identify the defects responsible for this limited endurance, a combination of electronic measurements and optical spectroscopies characterized the evolution of defect states within with cycling. Ultrathin (10 nm) metal contacts were used to optically probe regions subject to ferroelectric switching; photoluminescence spectroscopy identified the emergence of a transition near 2.1 eV whose intensity scaled with the non-switching polarization quantified…
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