LPCVD based Plasma Damage Free in situ etching of $\beta$-Ga$_2$O$_3$ using Solid Source Gallium

TL;DR

This paper introduces a plasma damage-free in situ etching method for $eta$-Ga$_2$O$_3$ using solid gallium in LPCVD, with detailed analysis of etch behavior, anisotropy, and facet evolution to optimize etching quality.

Contribution

It presents a novel LPCVD-based etching process utilizing solid gallium, achieving clean, anisotropic, and damage-free etching of $eta$-Ga$_2$O$_3$ with comprehensive understanding of etch dynamics.

Findings

Maximum etch rate of ~2.25 μm/hr at 1050°C and 2 cm source-to-substrate distance.

(100) orientation yields the most stable and smooth etch front.

Lateral etching increases with deviation from the (100) orientation.

Abstract

This work demonstrates a novel in situ etching technique for $\beta$-Ga$_2$O$_3$ using solid-source metallic Ga in a LPCVD system, enabling clean, anisotropic, plasma damage-free etching. Etching behavior was systematically studied on (-201) $\beta$-Ga$_2$O$_3$ films and patterned (010) $\beta$-Ga$_2$O$_3$ substrates as a function of temperature, Ar carrier gas flow, and Ga source-to-substrate distance. The process exhibits vapor transport- and surface-reaction-limited behavior, with etch rates reaching a maximum of $\sim$2.25~$\mu$m/hr on (010) substrates at 1050~$^\circ$C and 2 cm spacing. Etch rates decrease sharply with increasing source-to-substrate distance due to reduced Ga vapor availability, while elevated temperatures enhance surface reaction kinetics through increased Ga reactivity and suboxide formation, leading to enhanced etch rates. In-plane anisotropy studies using radial trench patterns reveal that the (100) orientation produces the most stable etch front, characterized by smooth, vertical sidewalls and minimal lateral etching, consistent with its lowest surface free energy. In contrast, orientations such as (101), which possess higher surface energy, exhibit pronounced lateral etching and micro-faceting. As the trench orientation progressively deviates from (100), lateral etching increases. Facet evolution is observed between (100) and (-102), where stepped sidewalls composed of alternating (100) and (-102) segments progressively transition into a single inclined facet, which stabilizes along (100) or (-102) depending on the trench orientation. The (100)-aligned fins exhibit minimal bottom curvature, while (201)-aligned structures display increased under-etching and trench rounding.