A Morphologically Self-Consistent Phase Field Model for the Computational Study of Memristive Thin Film Current-Voltage Hysteresis

TL;DR

This paper introduces a multiphysics phase field model for simulating memristive thin film behavior, accurately predicting filament evolution and hysteresis without geometric assumptions, aiding design and optimization.

Contribution

The novel model predicts filament evolution on thermodynamic paths considering atomic-level variations, unlike previous methods that required specific filament geometries.

Findings

Accurately predicts filament evolution paths

Enables wafer-scale mapping and analysis

Supports optimization of memristive device performance

Abstract

A multiphysics phase field model is used for the computational study of memristive thin film morphology and current-voltage hysteresis. In contrast to previous computational methods, no requirements are made on conducting filament geometry. Our method correctly predicts conducting filaments evolve on thermodynamic paths that are energetically favored due to stochastic structural and chemical variations naturally occurring at the atomic-level, due to both latent and intentional fabrication effects. These results have significant implications for the computational design of a broad class of memristive thin films, enabling practical wafer-scale mapping, uniformity, and endurance analysis and optimization.