Crystal Growth of Chalcogenides and Oxy-Chalcogenides Using Chloride Exchange Reaction
Shantanu Singh, Boyang Zhao, Christopher E. Stevens, Mythili Surendran, Tzu-Chi Huang, Bi-Hsuan Lin, Joshua R. Hendrickson, Jayakanth Ravichandran

TL;DR
This paper introduces a novel chloride exchange reaction method for rapid growth of high-quality single crystals of chalcogenides and oxy-chalcogenides, enhancing material synthesis for electronic and photonic applications.
Contribution
The study presents a new, efficient crystal growth technique using chloride exchange reactions, enabling large, high-quality crystals with short reaction times for complex chalcogenide materials.
Findings
Successful growth of ZrS₂, HfS₂, BaZrS₃, and ZrOS crystals
Crystals exhibit low mosaicity and high structural quality
Optical properties characterized by photoluminescence and Raman spectroscopy
Abstract
Chalcogenides and oxy-chalcogenides, including complex chalcogenides and transition metal dichalcogenides, are emerging semiconductors with direct or indirect band gaps within the visible spectrum. These materials are being explored for various photonic and electronic applications, such as photodetectors, photovoltaics, and phase-change electronics. Understanding the fundamental properties of these materials is crucial for optimizing their functionalities. Therefore, the availability of large, high-quality single crystals of chalcogenides and oxy-chalcogenides is essential for a better comprehension of their structure and properties. In this study, we present a novel crystal growth method that utilizes the exchange reaction between BaS and ZrCl/ HfCl. By carefully controlling the stoichiometric ratio of the binary sulfide to the chloride, we can grow single crystals of several…
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Taxonomy
TopicsChalcogenide Semiconductor Thin Films · Phase-change materials and chalcogenides · Chemical and Physical Properties of Materials
