Ultrafast dynamics of three-dimensional Kane plasmons in the narrow-bandgap Hg$_{0.8}$Cd$_{0.2}$Te
Xiaoyue Zhou, Yi Chan, Siyuan Zhu, Fu Deng, Wei Bai, Jingdi Zhang

TL;DR
This study uses ultrafast terahertz spectroscopy to explore the dynamics of bulk plasmons in narrow-bandgap Hg0.8Cd0.2Te, revealing how plasmon frequency scales with carrier density and confirming the presence of massless Kane fermions.
Contribution
It introduces a room-temperature method to analyze band dispersion in narrow-gap semiconductors, demonstrating the unique plasmon scaling in Kane fermions without high magnetic fields.
Findings
Plasma frequency scales with the cube root of carrier density in MCT.
The method distinguishes between massless and massive band dispersions.
Massless Kane fermion behavior persists despite deviations from the gapless condition.
Abstract
We report on an ultrafast terahertz spectroscopic study on the dynamics of free carriers and the pertinent bulk plasmons in HgCdTe (MCT) film, a narrowband semiconductor accommodating three dimensional massless Kane fermions. The ultrabroadband terahertz source enables the investigation of the lightly doped equilibrium state in the presence of plasmon-phonon hybridization through the heavily doped excited state, primarily dominated by plasmons. Without the recourse to the resource consuming cryogenic high magnetic field spectroscopy that hinges on observable related to the interband transition, we show that the massless band dispersion can instead be conveniently perceived by the room temperature study of the intraband transition through the determination of the plasmon carrier density relationship. We found the plasma frequency in MCT scales with the cube root of…
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Taxonomy
TopicsTopological Materials and Phenomena · Advanced Semiconductor Detectors and Materials · Semiconductor Quantum Structures and Devices
