Revealing the Breakdown Mechanism and Heat Dissipation in Few-Layered semimetallic PtSe2

TL;DR

This paper investigates the breakdown mechanisms and heat dissipation in few-layered PtSe2, revealing temperature-dependent processes that affect device stability and performance in 2D semimetallic materials.

Contribution

It provides a detailed analysis of the breakdown mechanisms of PtSe2 at different temperatures and quantifies heat dissipation through interfacial thermal conductivity measurements.

Findings

At room temperature, breakdown is mainly due to self-heating.

At low temperatures, breakdown is driven by carrier multiplication.

Interfacial thermal conductivity influences heat dissipation efficiency.

Abstract

Platinum diselenide (PtSe2) is an emerging two-dimensional (2D) transition metal dichalcogenide known for its excellent electrical and optical properties, along with remarkable air stability. For PtSe2-based electronic devices, understanding high-field breakdown and heat dissipation is crucial for designing high-performance and energy-efficient systems operating under extreme conditions. In this work, we investigate the breakdown mechanisms of semimetallic PtSe2 at both low and room temperatures. Heat dissipation is quantified via interfacial thermal conductivity (ITC) of PtSe2/SiO2 and PtSe2/h-BN interfaces using Raman thermometry. Our findings indicate that at room temperature, device breakdown is predominantly governed by self-heating effects. Conversely, at low temperatures, the breakdown is mainly driven by carrier multiplication under high electric fields, as further confirmed by Hall measurements.