A Taylor Series Approximation Model for Characterizing the Output Resistance of a GFET

TL;DR

This paper introduces a Taylor series approximation model to analytically characterize the output resistance of GFETs, simplifying the analysis of their static response near the Dirac voltage.

Contribution

It presents a novel linearized model for GFET output resistance using Taylor series, enabling analytical extraction of key device parameters.

Findings

Model valid for gate voltages near the Dirac voltage

Allows analytical determination of transconductance and residual charge parameters

Provides a continuous static response representation regardless of transfer symmetry

Abstract

The mobility-degradation-based model for the drain-to-source or output resistance of a graphene field-effect-transistor is linearized here using a Taylor series approximation. This simplification is shown to be valid from magnitudes of the gate voltage not significantly higher than the Dirac voltage, and it enables the analytical determination of the transconductance parameter, the voltage related to residual charges, and a bias-independent series resistance of the GFET. Furthermore, a continuous representation of the device's static response is achieved when substituting the extracted parameters into the model, regardless the transfer characteristic symmetry with respect to the Dirac voltage.