Asymmetric Electronic Band Alignment and Potentially Enhanced Thermoelectric Properties in Phase-Separated Mg2X (X=Si,Ge,Sn) Alloys

TL;DR

This study uses first-principles calculations to explore phase-separated Mg2X alloys, revealing asymmetric band alignment that could enhance thermoelectric performance through energy filtering effects.

Contribution

It uncovers the asymmetric electronic band alignment in Mg2X alloys and suggests potential for improved thermoelectric efficiency via nanostructure engineering.

Findings

Valence band offset is eight times larger than conduction band offset at Si/Sn interface.

Large valence band discontinuity can enable energy filtering effects.

Potential for increased power factor in p-type Mg2X alloys.

Abstract

The Mg2X (X=Si, Ge, Sn) based alloy is an eco-friendly thermoelectric material for mid-temperature applications. The Mg2Si1-xSnx and Mg2Ge1-xSnx alloys can be phase-separated into Si(Ge)- and Sn-rich phases during material synthesis, leading to a nanocomposite with locally varying electronic band structure. First-principles calculations reveal that the valence band offset is eight-times larger than the conduction band offset at the interface between Si- and Sn-rich phases for x=0.6, showing type-I and asymmetric band alignment (0.092 eV versus 0.013 eV). Using Boltzmann transport theory and thermionic emission calculations, we show that the large valence band energy discontinuity could allow for energy filtering effects to take place that can potentially increase the power factor substantially in the p-type material system if designed appropriately.