Reliability of Capacitive Read in Arrays of Ferroelectric Capacitors
Luca Fehlings, Muhtasim Alam Chowdhury, Banafsheh Saber Latibari, Soheil Salehi, Erika Covi

TL;DR
This paper investigates the reliability of capacitive readout in ferroelectric capacitor arrays, addressing device variability challenges and proposing design strategies to improve robustness and security in low-power, scalable memory systems.
Contribution
It introduces a digital read macro for HfO₂ ferroelectric capacitors, backed by a physics-based model and Monte Carlo simulations, along with design guidelines to mitigate variability effects.
Findings
Device variability limits read reliability
Design-technology co-optimization improves robustness
Potential security applications identified
Abstract
The non-destructive capacitance read-out of ferroelectric capacitors (FeCaps) based on doped HfO metal-ferroelectric-metal (MFM) structures offers the potential for low-power and highly scalable crossbar arrays. This is due to a number of factors, including the selector-less design, the absence of sneak paths, the power-efficient charge-based read operation, and the reduced IR drop. Nevertheless, a reliable capacitive readout presents certain challenges, particularly in regard to device variability and the trade-off between read yield and read disturbances, which can ultimately result in bit-flips. This paper presents a digital read macro for HfO FeCaps and provides design guidelines for capacitive readout of HfO FeCaps, taking device-centric reliability and yield challenges into account. An experimentally calibrated physics-based compact model of HfO FeCaps is employed…
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