Orbital Hall Effect Enables Field-Free Magnetization Reversal in Ferrimagnets without Additional Conversion Layer
Zelalem Abebe Bekele, Kun Lei, Xiukai Lan, Xiangyu Liu, Hui Wen, Weihao Li, Yongcheng Deng, Wenkai Zhu, Kaiming Cai, and Kaiyou Wang

TL;DR
This paper demonstrates that orbital Hall currents can induce field-free magnetization reversal in ferrimagnets without extra layers, offering a new energy-efficient approach for spintronics and orbitronics.
Contribution
The study introduces a novel method utilizing orbital Hall effect in Mo/CoGd devices for efficient, field-free magnetization switching without additional conversion layers.
Findings
Achieved deterministic switching with low critical current density (2.51×10^6 A/cm^2).
Validated in-plane symmetry breaking via planar Hall effect.
Showed dual role of CoGd in converting orbital to spin currents and self-switching.
Abstract
The spin Hall effect (SHE) enables efficient electrical manipulation of magnetization through the spin Hall current \left(\mathbit{J}_{\mathbit{SHE}}\right), advancing energy-efficient spintronics. In parallel, the orbital Hall effect (OHE) offers an alternative pathway to SHE for converting charge current into an angular momentum flow. In this study, we demonstrate field-free current-induced perpendicular ferrimagnetic deterministic switching within a Mo/CoGd device without an additional orbital-to-spin conversion layer. This is achieved by harnessing localized orbital Hall currents \left(\mathbit{J}_{\mathbit{OHE}}\right) generated in the Mo layer. The in-plane symmetry breaking at the Mo/CoGd surface-interface layer, validated by a pronounced planar Hall effect, gives rise to a substantial unconventional z-polarized damping-like torque. The CoGd serves a dual role: not only as a…
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Taxonomy
TopicsMagnetic properties of thin films · Topological Materials and Phenomena · Multiferroics and related materials
