Quantum dot transistors based on CVD-grown graphene nano islands

TL;DR

This paper demonstrates a catalyst-free method to fabricate graphene nanoislands on SiO2 substrates, enabling quantum transport measurements that reveal Coulomb blockade and quantum dot behavior relevant for quantum device development.

Contribution

It introduces a microwave plasma CVD technique for direct, catalyst-free graphene nanoisland fabrication, facilitating electrical measurements of their quantum properties.

Findings

Observation of Coulomb diamonds indicating quantum dot formation

Charge state modulation via local side gate

Tunneling coupling controlled by contact area and metal materials

Abstract

Graphene nanoislands (GNIs) are one of the promising building blocks for quantum devices owing to their unique potential. However, direct electrical measurements of GNIs have been challenging due to the requirement of metal catalysts in typical synthesis methods. In this study, we demonstrate electrical transport measurements of GNIs by using microwave plasma chemical vapor deposition, which is a catalyst-free method to deposit graphene directly on SiO$_2$ substrates. This approach enables the fabrication of metal electrodes on GNIs, allowing us to measure their quantum transport properties. At low temperatures, one of our devices shows clear Coulomb diamonds with twofold degeneracy, indicating the formation of quantum dots and the vanishing of valley degeneracy. The charge state of the GNI is also modulated by a local side gate, and the tunneling coupling between leads and quantum dots is modulated by changing contact area and metal materials. These results provide device design guidelines toward GNI-based quantum devices for next-generation computing.