Enhancing z spin generation in trivial spin Hall materials for scalable, energy-efficient, field-free, complete spin-orbit torque switching applications
Qianbiao Liu, Lijun Zhu

TL;DR
This paper demonstrates a significant enhancement of z spin generation in alloyed PtTi/FeCoB devices, enabling low-power, complete, and scalable spin-orbit torque switching suitable for advanced magnetic memory applications.
Contribution
It introduces a novel alloying and engineering approach to greatly improve z spin generation in trivial spin Hall materials, achieving record-low power switching.
Findings
6-fold increase in dampinglike z spin torque
Complete deterministic switching at low power
Compatibility with wafer-scale fabrication and high thermal stability
Abstract
Despite the remarkable efforts in the past two decades, it has remained a major challenge to achieve switching of perpendicularly magnetized spin-orbit torque devices in a scalable, energy-efficient, field-free, integration-friendly, and complete manner. Here, we report giant enhancement of z spin generation in low-resistivity spin Hall metal/FeCoB devices by alloying the spin Hall metal Pt with Ti and by electric asymmetry engineering. The dampinglike spin torques of z spins and y spins are enhanced by 6 and 3 times relative to that of conventional Pt/FeCoB and enable complete, record-low-power, deterministic switching of FeCoB devices with strong perpendicular magnetic anisotropy and high coercivity. The Pt75Ti25/FeCoB heterostructure also exhibits relatively low resistivity, wafer-scale uniform sputter-deposition on silicon oxide, good compatibility with magnetic tunnel junctions,…
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