Thickness Dependence of Coercive Field in Ferroelectric Doped-Hafnium Oxide
Revanth Koduru, Sumeet Kumar Gupta

TL;DR
This study investigates how the coercive field in ferroelectric doped-Hafnium Oxide varies with film thickness, revealing a modified scaling law due to the material's anisotropic crystal structure and domain confinement effects.
Contribution
The paper introduces a new model explaining the reduced thickness dependence of coercive field in HfO₂, deviating from classical theories by considering its anisotropic layered structure.
Findings
E_c scales as d^{-1/2} in HfO₂, differing from classical d^{-2/3} dependence.
Experimental data aligns with the proposed modified scaling law.
Domain growth is confined to a single polar plane due to layered structure.
Abstract
Ferroelectric hafnium oxide () exhibits a thickness-dependent coercive field behavior that deviates from the trends observed in perovskites and the predictions of Janovec-Kay-Dunn (JKD) theory. Experiments reveal that, in thinner films (), increases with decreasing thickness but at a slower rate than predicted by the JKD theory. In thicker films, saturates and is independent of thickness. Prior studies attributed the thick film saturation to the thickness-independent grain size, which limits the domain growth. However, the reduced dependence in thinner films is poorly understood. In this work, we expound the reduced thickness dependence of , attributing it to the anisotropic crystal structure of the polar orthorhombic (o) phase of . This phase consists of continuous polar layers (CPL) along one in-plane direction and alternating…
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Taxonomy
TopicsFerroelectric and Negative Capacitance Devices · Semiconductor materials and devices · Ferroelectric and Piezoelectric Materials
