Theory and computation of thermal-field emission from semiconductors

TL;DR

This paper reviews and improves models for thermal-field electron emission from semiconductors, enabling accurate 3D simulations that cover all emission regimes and explain experimental phenomena.

Contribution

It introduces corrected equations integrated into GETELEC-2.0, allowing comprehensive and precise simulation of semiconductor electron emission across regimes.

Findings

Accurately reproduces non-linear I-V curves in Fowler-Nordheim coordinates.

Provides explanations for the absence of valence band electron observations.

Expands simulation capabilities for semiconductor emission models.

Abstract

Semiconducting field emitters present some interesting features (e.g.; self-limited electron emission) for both scientific interest and industrial applications. The analysis of experimental results and device design has been restrained by the lack of accurate 3D models for the simulation of thermal-field emission from semiconductors. Here we review and correct the equations of field emission from semiconductors and include them to expand GETELEC (General Tool for Electron Emission Calculations). Our method covers all electron emission regime (field, thermal, and intermediate), aiming to maximise the calculation accuracy while minimising the computational cost. GETELEC-2.0 is able to reproduce the characteristic non-linear I-V curves in Fowler-Nordheim coordinates obtained from semiconductors, giving insights about their nature. As well as providing an explanation to the lack of experimental observation of valence band electrons from semiconductors.