X-ray Irradiation Studies on the Monopix DMAPS in 150$\,$nm and 180$\,$nm

TL;DR

This study investigates the radiation tolerance of Monopix DMAPS sensors fabricated in 150nm and 180nm CMOS technologies, demonstrating their robustness up to 100 Mrad of X-ray irradiation for high-radiation detector applications.

Contribution

It provides the first comprehensive X-ray irradiation evaluation of large-scale Monopix DMAPS chips in 150nm and 180nm technologies, confirming their suitability for high-radiation environments.

Findings

No significant performance degradation at 100 Mrad

Continuous operability throughout irradiation

Suitable for high-radiation pixel detector applications

Abstract

Monolithic active pixel sensors with depleted substrates present a promising option for pixel detectors in high-radiation environments. High-resistivity silicon substrates and high bias voltage capabilities in commercial CMOS technologies facilitate depletion of the charge sensitive volume. TJ-Monopix2 and LF-Monopix2 are the most recent large-scale chips in their respective development line, aiming for the ATLAS Inner Tracker outer layer requirements. Those include a tolerance to ionizing radiation of up to 100$\,$Mrad. It was evaluated by irradiating both devices with X-rays to the corresponding ionization dose, showing no significant degradation of the performance at 100$\,$Mrad and continuous operability throughout the irradiation campaign.