Hydrogen defects as probes of band alignment in metal-organic frameworks

TL;DR

This paper introduces a method to accurately align the band structures of complex metal-organic frameworks using hydrogen defects as probes, enabling better comparison with experimental data.

Contribution

The authors develop a novel approach using hydrogen defect levels to align MOF band structures on an absolute energy scale, improving accuracy over previous methods.

Findings

The hydrogen defect level effectively captures chemical bonding details.

The method aligns well with experimental band positions across various MOFs.

Comparison shows advantages over surface calculation approaches.

Abstract

Band alignment, namely the prediction of band-edge positions of semiconductors and insulators in aqueous solutions, is an important problem in physics and chemistry. Such a prediction is especially challenging for structurally and chemically complex, multi-component materials. Here we present an approach to align band structure of metal-organic frameworks (MOFs) on an absolute energy scale which can be used for direct comparison with experiments. Hydrogen defects are used as probes into the chemical bonding of the hybrid inorganic-organic materials. An effective hydrogen defect level, defined as the average of the charge-state transition levels of the defects at the secondary building unit and at the linker, is identified as a charge neutrality level to align band structures. This level captures subtle chemical details at both the building blocks and provides results that are in agreement with experiments in a wide range of different MOFs. We also compare with results obtained from using other approaches involving surface calculations and average pore-center electrostatic potentials.