Engineering Ge profiles in Si/SiGe heterostructures for increased valley splitting

TL;DR

This study explores a novel method to increase valley splitting in Si/SiGe heterostructures by using broader interfaces and thinner quantum wells, leading to improved quantum dot spin qubits.

Contribution

It demonstrates that increasing quantum well thickness and interface broadness can enhance valley splitting on average, offering an alternative to sharp interfaces.

Findings

Enhanced valley splitting observed in broader interface quantum wells.

Linear correlation between valley splitting and disorder.

Predicted valley splitting in quantum dots matches experimental enhancement.

Abstract

Electron spin qubits in Si/SiGe quantum wells are limited by the small and variable energy separation of the conduction band valleys. While sharp quantum well interfaces are pursued to increase the valley splitting energy deterministically, here we explore an alternative approach to enhance the valley splitting on average. We grow increasingly thinner quantum wells with broad interfaces to controllably increase the overlap of the electron wave function with Ge atoms. In these quantum wells, comprehensive quantum Hall measurements of two-dimensional electron gases reveal a linear correlation between valley splitting and disorder. Benchmarked against quantum wells with sharp interfaces, we demonstrate enhanced valley splitting while maintaining a low-disorder potential environment. Simulations using the experimental Ge concentration profiles predict an average valley splitting in quantum dots that matches the enhancement observed in two-dimensional systems. Our results motivate the experimental realization of quantum dot spin qubits in these heterostructures.