Simulation of single hole spin qubit in strained triangular FinFET quantum devices

TL;DR

This paper models a single hole spin qubit in a strained triangular FinFET device using a Schroedinger-Poisson solver, highlighting strain effects on qubit properties crucial for quantum computing design.

Contribution

It introduces a detailed simulation approach incorporating strain effects in FinFET-based hole spin qubits, emphasizing the importance of realistic thermal contraction modeling.

Findings

Strain significantly affects qubit energy levels and band mixing.

Qubit g-factor and Rabi frequencies are strain-dependent.

Thermal contraction impacts qubit performance metrics.

Abstract

Using an in-house Schroedinger-Poisson (SP) solver, we investigate the creation of a single hole spin qubit inside a triple-gate triangular silicon fin field effect transistor (Si FinFET) quantum device similar to experimental structures. The gate induced formation of the required quantum dot (QD) is monitored based on the Luttinger-Kohn 6x6 kp method accounting for magnetic fields and strain to determine the qubit ground state. Strain arises from the inhomogeneous contraction of the different FinFET components when they are cooled down to cryogenic temperatures. It leads to a renormalization of the qubit energy levels, thus impacting both the heavy-hole (HH) and light-hole (LH) populations as well as their mixing. The dot length, band mixing, g-factor, and Larmor/Rabi frequencies of the considered device are extracted. In particular, we show that these metrics exhibit strong strain-dependent variations of their magnitude, thus underlying the importance of including realistic thermal contraction scenarios when modeling hole spin qubits.