A Thermally Modulated SINIS Trasconductance Amplifier
Giacomo Trupiano, Giorgio De Simoni, Francesco Giazotto

TL;DR
This paper presents a superconducting transconductance amplifier that uses thermal modulation of a SINIS structure, achieving high gain and transconductance at cryogenic temperatures with low power dissipation.
Contribution
The paper introduces a novel thermally modulated SINIS-based superconducting amplifier with high transconductance and gain, suitable for cryogenic applications.
Findings
Transconductance exceeds 4 mS at temperatures below 250 mK.
Current gain surpasses 45 dB.
Operational bandwidth up to 1 MHz with a cutoff around 10 MHz.
Abstract
We introduce a superconducting transconductance amplifier based on the thermal modulation of a SINIS (Superconductor-Insulator-Normal metal-Insulator-Superconductor) configuration. The device is composed of a normal metal island interfaced with two superconducting leads through tunnel barriers, establishing a voltage-biased symmetric SINIS setup. An additional NIS junction connects the island to a third superconducting lead, which serves as input. When the input voltage surpasses the superconducting gap, the resultant injection of quasiparticles increases the electronic temperature of the island, thereby modulating the SINIS current. We perform numerical analyzes of the device performance, influenced by input voltage, frequency, and bath temperature. At bath temperatures below 250 mK, the device shows a transconductance exceeding 4 mS and a current gain exceeding 45 dB. Both gain and…
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Taxonomy
Topicssolar cell performance optimization · Semiconductor Quantum Structures and Devices · Advanced Electrical Measurement Techniques
