Composition dependent $\mathbf{k}\cdot\mathbf{p}$ band parameters for wurtzite (Al,Ga)N alloys from density functional theory
Amit Kumar Singh, Alvaro Gomez-Iglesias, Stefan Schulz

TL;DR
This paper derives composition-dependent k.p band parameters for (Al,Ga)N alloys using DFT, revealing significant nonlinearities and their impact on electronic structure and optical properties, aiding device design.
Contribution
It provides detailed, composition-dependent k.p parameters for (Al,Ga)N alloys derived from DFT, improving upon the linear interpolation approximation.
Findings
Most k.p parameters deviate from linear interpolation.
Bowing parameters are necessary for accurate modeling.
Band ordering is affected by nonlinear composition dependence.
Abstract
UV emitters based on the semiconductor alloy aluminium gallium nitride, (Al,Ga)N, have attracted significant interest in recent years due to their potential for optoelectronic devices. To guide the design of such devices with improved efficiencies, theoretical frameworks based on so-called k.p methods have found widespread application in the literature. Given that k.p models are empirical in nature, parameters such as effective masses or crystal field splitting energies of (Al,Ga)N alloys have to be provided as input from first-principles calculations or experiment. Although these parameters are available for GaN and AlN, detailed information on their composition dependence is sparse. Here, we address this question and provide (Al,Ga)N band parameters for widely used k.p Hamiltonians. We start from density functional theory (DFT) to sample the electronic structure of (Al,Ga)N alloys…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
Taxonomy
TopicsGaN-based semiconductor devices and materials · Semiconductor materials and interfaces · Semiconductor materials and devices
