Novel active avalanche paradigm for power semiconductor device extending extending SOA to 6.5kV/15kA

TL;DR

This paper introduces a new Avalanche Controlled Thyristor (ACT) device that significantly enhances power semiconductor switching capabilities, enabling higher current handling and improving renewable energy integration.

Contribution

The paper presents a novel semiconductor device with active avalanche control, achieving a record switch-off current of 15kA, surpassing conventional devices without losing performance.

Findings

Achieved a 15kA switch-off current, 375% higher than traditional devices.

Demonstrated robust switch-off ability through electrical potential manipulation.

Revolutionizes power semiconductor switching for renewable energy applications.

Abstract

With the rapid growth of renewable energy being integrated, transmitted, and utilized in various forms, power systems are evolving from traditional metal-based infrastructures to advanced semiconductor-based technologies. Central to this transformation, power semiconductor devices now face the crucial demands of ultrahigh switching ability, presenting a long-standing challenge in the field. In this work, building on the P-N-P-N scheme, we propose a novel Avalanche Controlled Thyristor (ACT) device, which pivots an active avalanche paradigm to realize robust and strong switch-off ability through semiconductor-level electrical potential manipulation. Unprecedentedly, we achieve a controllable switch-off current record of 15kA, 375% that of the conventional devices without sacrificing the blocking and conduction capability. The novel device signifies that switching ability is no longer a bottleneck for power semiconductor devices, which is believed to revolutionarily reshape the technical and practical landscape of power conversion, and fundamentally boost the large-scale integration, cross-regional transmission, and cost-effective utilization of renewable energy.